| データシートサーチシステム |
|
SS8053G データシート(PDF) 2 Page - Silicon Standard Corp. |
|
|
|||||||||||||||||||||||||||||
SS8053G データシート(HTML) 2 Page - Silicon Standard Corp. |
|
2 / 3 page ![]() www.SiliconStandard.com 2 of 3 SS8053G 9/27/2006 Rev.1.01 ABSOLUTE MAXIMUM RATINGS (Note 1) Input Voltage………………………………….…………7V Power Dissipation Internally Limited (Note 2) Maximum Junction Temperature.…………………150°C Storage Temperature Range.……..-65°C <T J < +150°C Reflow Temperature (soldering, 10sec)…..…....260°C Thermal Resistance Junction to Ambient.……141°C/W Thermal Resistance Junction to Case…………..20.1°C/W ESD Rating (Human Body Model)……….………….2kV OPERATING CONDITIONS (Note 1) Input Voltage………………………………..…2.2V ~5.5V Temperature Range………….………-40°C <T A < +85°C ELECTRICAL CHARACTERISTICS VIN =5V, IO = 0.5A, CIN = 4.7µF, COUT =10µF, TA = TJ = 25°C unless otherwise specified (Note 3) PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT Supply Voltage VIN 2.2 --- 5.5 V Output Voltage VO VIN=VO +0.7V, IO=10mA -2 VO 2 % Line Regulation VO+0.7V < VIN < 5.5V, IO=10mA --- 0.2 2 % Load Regulation 10mA < IO < 1.5A --- 0.8 2 % Quiescent Current IQ VIN=3.3V --- 1.7 2.5 mA Ripple Rejection fi=120Hz, 1VP-P, IO=100mA --- 55 --- dB Dropout Voltage VD IO=1.5A --- 0.5 0.65 V Short Circuit Current --- 0.8 --- A Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Con- ditions are conditions under which the device functions but the specifications might not be guaranteed. For guaranteed specifications and test conditions see the Electrical Characteristics. Note2: The maximum power dissipation is a function of the maximum junction temperature, T Jmax ; total thermal resistance, Q JA, and ambient temperature TA. The maximum allowable power dissipation at any ambient temperature is (Tjmax-TA) / QJA. If this dissipation is exceeded, the die temperature will rise above 150°C and the chip will go into thermal shutdown. Note3: Low duty pulse techniques are used during test to maintain the junction temperature as close to ambient as possible. Note4: The type of output capacitor should be tantalum or aluminum. Definitions Dropout Voltage The input/output voltage differential at which the regu- lator output no longer maintains regulation against fur- ther reductions in input voltage. Measured when the output drops 2% below its nominal value, dropout volt- age is affected by junction temperature, load current and minimum input supply requirements. Line Regulation The change in output voltage for a change in input voltage. The measurement is made under conditions of low dissipation or by using pulse techniques such that the average chip temperature is not significantly affected. Load Regulation The change in output voltage for a change in load current at constant chip temperature. The measure- ment is made under conditions of low dissipation or by using pulse techniques such that the average chip temperature is not significantly affected. Maximum Power Dissipation The maximum total device dissipation for which the regulator will still operate within specifications. Quiescent Bias Current Current which is used to operate the regulator chip and is not delivered to the load. |
|
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |