2PD601ASW datasheet(4/8 Pages) NXP

部品番号	2PD601ASW

部品情報	NPN general purpose transistors; 50 V, 100 mA

PDF	8 Pages

Scroll/Zoom	100%

メーカー	NXP [NXP Semiconductors]

ホームページ	http://www.nxp.com

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4 / 8 page

2004 Feb 12

NXP Semiconductors

Product data sheet

NPN general purpose transistors; 50 V,

100 mA

2PD601A series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0; VCB = 60 V

−

IE = 0; VCB = 60 V; Tj = 150 °C

−

μA

IEBO

emitter-base cut-off current

IC = 0; VEB = 5 V

−

hFE

DC current gain

IC = 100 mA; VCE = 2 V; note 1

−

hFE

DC current gain

IC = 2 mA; VCE = 10 V

group Q

160

260

group R

210

340

group S

290

460

VCEsat

collector-emitter saturation voltage

IC = 100 mA; IB = 10 mA; note 1

−

250

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

transition frequency

IC = 2 mA; VCE = 10 V;

f = 100 MHz

100

−

MHz

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