ASCT4

Characteristics

Doc ID 8766 Rev 5

5/13

Figure 10.

On-state characteristics

(maximum values)

Figure 11.

Relative variation of critical rate of

versus junction temperature

1

10

100

01

2

3

4

5

Tj = 125 °C

Tj = 25 °C

ITM(A)

VTM(V)

Tjmax:

Vto = 0.90 V

Rd = 110 mΩ

0

1

2

3

4

5

6

7

25

50

75

100

125

8

Tj(°C)

(dI/dt)c [Tj] / (dl/dt)c [Tj = 125 °C]

Figure 12.

Relative variation of static dV/dt

immunity versus junction

temperature (gate open)

Figure 13.

Relative variation of leakage

current versus junction

temperature

0

1

2

3

4

5

6

25

50

75

100

125

dV/dt [Tj] / dV/dt [Tj = 125 °C]

VD =VR = 536 V

Tj(°C)

25

50

75

100

125

VDRM =VRRM = 800V

VDRM =VRRM = 600 V

VDRM =VRRM = 200 V

IDRM/IRRM [Tj;VDRM /VRRM] / IDRM/IRRM [Tj = 125 °C; 800 V]

1.0E-03

1.0E-02

1.0E-01

1.0E+00

Tj(°C)

Different blocking voltages

Figure 14.

Relative variation of the clamping

temperature (minimum values)

Figure 15.

Thermal resistance junction to

ambient versus copper surface

under tab

0.85

0.90

0.95

1.00

1.05

1.10

1.15

-50

-25

0

25

50

75

100

125

V[Tj] / V [Tj = 25 °C]

CL

CL

Tj(°C)

0

10

20

30

40

50

60

70

80

90

100

0

5

10

15

20

25

30

35

40

Rth(j-a)(°C/W)

DPAK

Printed circuit board FR4,

copper thickness = 35 µm