2004 Aug 17

2

NXP Semiconductors

Product data sheet

NPN resistor-equipped transistors;

R1 = 22 k

Ω, R2 = 22 kΩ

PDTC124E series

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

DESCRIPTION

NPN resistor-equipped transistor (see “Simplified outline,

symbol and pinning” for package details).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

collector-emitter

voltage

−

50

V

output current (DC)

−

100

mA

R1

bias resistor

22

−

k

Ω

R2

bias resistor

22

−

k

Ω

PRODUCT OVERVIEW

Note

1.

* = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

TYPE NUMBER

PACKAGE

MARKING CODE

PNP COMPLEMENT

PHILIPS

EIAJ

PDTC124EE

SOT416

SC-75

06

PDTA124EE

PDTC124EEF

SOT490

SC-89

36

PDTA124EEF

PDTC124EK

SOT346

SC-59

06

PDTA124EK

PDTC124EM

SOT883

SC-101

DX

PDTA124EM

PDTC124ES

SOT54 (TO-92)

SC-43

TC124E

PDTA124ES

PDTC124ET

SOT23

−

*17(1)

PDTA124ET

PDTC124EU

SOT323

SC-70

*06(1)

PDTA124EU