2004 Apr 07

2

NXP Semiconductors

Product data sheet

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = open

PEMD6; PUMD6

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• Low current peripheral driver

• Replacement of general purpose transistors in digital

applications

• Control of IC inputs.

DESCRIPTION

NPN/PNP resistor-equipped transistors (see

“_Data_Sheet_Remark Supersedes data of 2003 Nov 04”

for package details).

QUICK REFERENCE DATA

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

collector-emitter

voltage

−

50

V

output current (DC)

−

100

mA

TR1

NPN

−

−

−

TR2

PNP

−

−

−

R1

bias resistor

4.7

−

k

Ω

R2

open

−

−

−

PRODUCT OVERVIEW

Note

1.

* = p: Made in Hong Kong.

* = t: Made in Malaysia.

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

TYPE NUMBER

PACKAGE

MARKING CODE

NPN/NPN

COMPLEMENT

PNP/PNP

COMPLEMENT

PHILIPS

EIAJ

PEMD6

SOT666

−

D6

PEMH7

PEMB3

PUMD6

SOT363

SC-88

D*6(1)

PUMH7

PUMB3

TYPE NUMBER

SIMPLIFIED OUTLINE AND SYMBOL

PINNING

PIN

DESCRIPTION

PEMD6; PUMD6

1

emitter TR1

2

base TR1

3

collector TR2

4

emitter TR2

5

base TR2

6

collector TR1

handbook, halfpage

MHC028

12

3

4

6

5

Top view

65

4

12

3

TR1

TR2

R1

R1