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NTMFS4841NHT3G データシート(PDF) 4 Page - ON Semiconductor |
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NTMFS4841NHT3G データシート(HTML) 4 Page - ON Semiconductor |
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4 / 7 page ![]() NTMFS4841NH http://onsemi.com 4 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 012 3456 Figure 1. On−Region Characteristics VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 3.2 V 3.8 V 4.0 V 4.2 V 4.4 V 3.6 V 3.4 V TJ = 25°C 4.6 V 4.8 V 5.0 V 7.0 V 10 V 0 10 20 30 40 50 60 70 80 90 12 34 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics TC = 25°C TC = −55°C TC = 125°C 0.004 0.005 0.006 0.007 0.008 0.009 0.010 0.011 0.012 0.013 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance versus Gate−to−Source Voltage ID = 30 A TJ = 25°C 0.002 0.0025 0.003 0.0035 0.004 0.0045 0.005 0.0055 0.006 0.0065 0.007 0.0075 0.008 0.0085 0.009 0.0095 0.01 0.0105 0.011 0.0115 0.012 10 15 20 25 30 35 40 45 50 55 VGS = 11.5 V VGS = 4.5 V ID, DRAIN CURRENT (A) Figure 4. On−Resistance versus Drain Current and Gate Voltage TJ = 25°C 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 −55 −35 −15 5 25 45 65 85 145 Figure 5. On−Resistance Variation with Temperature TJ, JUNCTION TEMPERATURE (°C) ID = 30 A VGS = 10 V 105 105 0.1 1 10 100 1000 10000 5 1015 2025 30 Figure 6. Drain−to−Source Leakage Current versus Voltage VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 0 V TJ = 150°C TJ = 125°C TJ = 25°C |
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