3

Memory ICs

BA6129AF / BA6162 / BA6162F

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

——

2.0

mA

—

0.03

0.05

V

4.95

4.97

—

4.70

4.90

—

4.50

4.86

—

3.35

3.50

3.65

V

→L

—

100

—

mV

→H

——

0.4

V

——

0.1

µA

—

0.8

1.2

V

0.4V

——

0.1

V

µA

4.9

——

µA

——

0.1

V

µA

Vo – 0.1

——

µA

—

—

– 0.05

—

+ 0.05

% /

°C

3.15

3.30

3.45

V

—

100

—

mV

– 0.05

—

+ 0.05

% /

°C

——

0.5

—

0.20

0.30

V

µA

2.70

2.80

—

µA

2.60

2.67

—

µA

——

0.1

Not designed for radiation resistance.

——

V

No-load current dissipation

I / O voltage differential 1

Vo output voltage 1

Vo output voltage 2

Vo output voltage 3

Detection voltage

Detection hysteresis voltage

Reset output low level voltage

Reset leakage current

Reset operating limit voltage

CS output low level voltage

CS output high level voltage

CSB output low level voltage

CSB output high level voltage

Detection voltage temperature characteristic

Switching voltage

Switching hysteresis voltage

Switching voltage temperature characteristic

Backup current dissipation

I / O voltage differential 2

Vo output voltage 4

Vo output voltage 5

Vo output voltage 6

Reverse current

Ω)