RG1C datasheet(1/1 Pages) SANKEN

部品番号	RG1C

部品情報	Ultra-Fast-Recovery Rectifier Diodes

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メーカー	SANKEN [Sanken electric]

ホームページ	http://www.sanken-ele.co.jp/en

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SANKEN ELECTRIC CO., LTD.

RG1C

030108

1／4

61426-01

１ Scope

The present specifications shall apply to an RG1C.

２ Outline

High Frequency Rectification

Type

Silicon Rectifier Diode

Structure

Resin Molded

Applications

High Frequency Rectification, etc.

３ Flammability

UL94V-0(Equivalent)

４ Absolute maximum ratings

No.

Item

Symbol

Unit

Rating

Conditions

1

Transient Peak Reverse Voltage

VRSM

V

1000

2

Peak Reverse Voltage

VRM

V

1000

3

Average Forward Current

IF(AV)

A

0.7

Refer to derating curve

in Section 7

4

Peak Surge Forward Current

IFSM

A

10

10ms.

Half sine wave, one shot

5

I

2t Limiting Value

I

2t

A

2s

0.5

1ms≦t≦10ms

6

Junction Temperature

Tj

°C

-40～+150

7

Storage Temperature

Tstg

°C

-40～+150

５ Electrical characteristics (Ta=25°C, unless otherwise specified)

No.

Item

Symbol

Unit

Rating

Conditions

1

Forward Voltage Drop

VF

V

3.3 max.

IF=0.7A

2

Reverse Leakage Current

IR

µA

20 max.

VR=VRM

3

Reverse Leakage Current Under

High Temperature

H･IR

mA

250 max.

VR=VRM, Tj=150°C

4

Reverse Recovery Time

trr1

ns

100 max.

IF=IRP=100mA

90% Recovery point, Tj=25°C

trr2

ns

50 max.

IF=100mA,IRP=200mA

75% Recovery point ,Tj=25°C

5

Thermal Resistance

Rth(j-c)

°C/W

15 max.

Between Junction and Lead

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