STPR810D datasheet(1/2 Pages) SIRECT

部品番号	STPR810D

部品情報	Ultra Fast Recovery Diodes

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メーカー	SIRECT [Sirectifier Global Corp.]

ホームページ	http://www.sirectsemi.com

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STPR810D thru STPR820D

FEATURES

* Glass passivated chip

* Superfast switching time for high efficiency

* Low forward voltage drop and high current capability

* Low reverse leakage current

* High surge capacity

MECHANICAL DATA

* Case: TO-220AC molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

Dim.

A

B

C

D

E

F

G

H

J

K

L

M

N

Q

Milimeter

Min.

Max.

12.70

14.73

14.23

16.51

9.66

10.66

3.54

4.08

5.85

6.85

2.54

3.42

1.15

1.77

-

6.35

0.64

0.89

4.83

5.33

3.56

4.82

0.38

0.56

2.04

2.49

0.64

1.39

Inches

Min.

Max.

0.500

0.580

0.560

0.650

0.380

0.420

0.139

0.161

2.300

0.420

0.100

0.135

0.045

0.070

-

0.250

0.025

0.035

0.190

0.210

0.140

0.190

0.015

0.022

0.080

0.115

0.025

0.055

Dimensions TO-220AC

STPR810D

STPR820D

VRRM

V

100

200

VRMS

V

70

140

VDC

V

100

200

A=Anode, C=Cathode, TAB=Cathode

C

A

Symbol

Characteristics

I(AV)

Maximum Average Forward Rectified Current

@TC=120 C

IFSM

Non Repetitive Peak Forward Surge Current

Per Diode Sinusoidal (JEDEC METHOD)

TP=10ms

TP=8.3ms

Maximum Forward Voltage

Pulse Width=300us

Duty Cycle

IF=8A

@TJ=125 C

IF=16A @TJ=125 C

IF=16A @TJ=25 C

VF

IR

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@TJ=25 C

@TJ=100 C

CJ

Typical Junction Capacitance (Note 1)

TRR

Maximum Reverse Recovery Time (Note 2)

Typical Thermal Resistance

TJ, TSTG

Operating and Storage Temperature Range

Maximum Ratings

8.0

80

90

0.99

1.20

1.25

50

600

80

30

3.0

-55 to +150

A

V

Unit

uA

pF

ns

o

ROJC

C/W

o

C

o

NOTES: 1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.

C(TAB)

C

A

Ultra Fast Recovery Diodes

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