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2SC5607 データシート(PDF) 2 Page - Sanyo Semicon Device |
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2SC5607 データシート(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SC5607 No.6403-2/4 + + 50 Ω INPUT OUTPUT VR RB RL VCC=5V 220 µF 470 µF VBE= --5V PW=20 µs D.C. ≤1% IB1 IB2 20IB1= --20IB2= IC=1.5A Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=10V, IE=0 0.1 µA Emitter Cutoff Current IEBO VEB=4V, IC=0 0.1 µA DC Current Gain hFE1VCE=2V, IC=500mA 600 hFE2VCE=2V, IC=3A 200 Gain-Bandwidth Product fT VCE=2V, IC=500mA 380 MHz Output Capacitance Cob VCB=10V, f=1MHz 23 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=1.5A, IB=30mA 100 150 mV VCE(sat)2 IC=3A, IB=60mA 180 270 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=30mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 15 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 10 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 7 V Turn-On Time ton See specified Test Circuit. 30 ns Storage Time tstg See specified Test Circuit. 210 ns Fall Time tf See specified Test Circuit. 11 ns Switching Time Test Circuit 3 2 1 5 4 0 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 1.5 1.0 0.5 2.0 0 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 3 2 1 5 4 0 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 0.1 0.01 23 5 7 23 5 7 2 3 5 7 1.0 10 0 12 4 3 5 VCE=2V VCE=2V IT01588 IT01589 IT01590 IT01591 IB=0 IB=0 1mA 10mA 15mA 20mA 3mA 5mA 1mA 2mA 10mA 15mA 4mA 6mA 8mA Ta=75 °C 25 °C --25 °C 4mA 2mA 25mA IC -- VCE IC -- VCE hFE -- IC IC -- VBE Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A |
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