D882 datasheet(1/2 Pages) PFS

部品番号	D882

部品情報	TRANSISTOR ( NPN )

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D882 TRANSISTOR ( NPN )

MAXIMUM RATINGS* TA=25

℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

3

A

PD

Total Device Dissipation

1.25

W

TJ

Junction Temperature

150

℃

Tstg

Junction and Storage Temperature

-55-150

℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL

CHARACTERISTICS(Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=100uA ,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 10 mA ,

IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100 mA ,IC=0

6

V

Collector cut-off current

ICBO

VCB=40 V ,

IE=0

1

uA

Collector cut-off current

ICEO

VCE=30 V ,

IB=0

10

uA

Emitter cut-off current

IEBO

VEB=6V ,

IC=0

1

uA

hFE(1)

VCE= 2V, IC= 1A

60

400

DC current gain

hFE(2)

VCE=2V, IC= 100mA

32

Collector-emitter saturation voltage

VCE(sat)

IC=2A,

IB= 0.2A

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=2A,

IB= 0.2A

1.5

V

Transition frequency

f T

VCE=5 V,

IC=0.1mA

f = 10MHz

50

MHz

CLASSIFICATION OF hFE(1)

1 2 3

TO-126

1. EMITTER

2. COLLECTOR

3. BASE

R

O

Y

GR

Range

60-120

100-200

160-320

200-400

Rank

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