BUJ105AD datasheet(4/12 Pages) NXP

4 / 12 page

9397 750 14196

Product data sheet

Rev. 01 — 14 December 2004

4 of 12

Philips Semiconductors

BUJ105AD

Silicon diffused power transistor

[1]

Measured with half sine-wave voltage (curve tracer).

Dynamic characteristics

Switching times (resistive load); see Figure 5 and 6

ton

turn-on time

ICon = 5 A; IBon = −IBoff = 1 A; RL =75 Ω

0.65

µs

tstg

storage time

1.8

2.5

µs

fall time

0.3

0.5

µs

Switching times (inductive load); see Figure 7 and 8

tstg

storage time

ICon = 5 A; IBon = 1 A; LB =1 µH;

VBB = −5V

1.2

1.7

µs

fall time

2050ns

Switching times (inductive load); see Figure 7 and 8

tstg

storage time

ICon = 5 A; IBon = 1 A; LB = 1 µH;

VBB = −5 V; Tj = 100 °C

1.4

1.9

µs

fall time

100

Table 5:

Characteristics …continued

Tmb = 25 °C; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Fig 3.

Test circuit for collector-emitter sustaining

voltage

Fig 4.

Oscilloscope display for collector-emitter

sustaining voltage test waveform

001aab987

horizontal

Ω

300

Ω

6 V

vertical

oscilloscope

50 V

100

Ω to 200 Ω

30 Hz to 60 Hz

001aab988

VCE (V)

min

VCEOsus

(mA)

100

250

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