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M48T512V データシート(PDF) 18 Page - STMicroelectronics

部品番号 M48T512V
部品情報  5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER짰 SRAM
PDF  23 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48T512V データシート(HTML) 18 Page - STMicroelectronics

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DC and AC parameters
M48T512Y, M48T512V
18/23
Doc ID 5747 Rev 6
Table 10.
Power down/up AC characteristics
Table 11.
Power down/up trip points DC characteristics
Symbol
Parameter(1)
1.
Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
Min
Max
Unit
tF
(2)
2.
VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after
VCC passes VPFD (min).
VPFD (max) to VPFD (min) VCC fall time
300
µs
tFB
(3)
3.
VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
VPFD (min) to VSS VCC fall time
M48T512Y
10
µs
M48T512V
150
µs
tR
VPFD (min) to VPFD (max) VCC rise time
10
µs
tRB
VSS to VPFD (min) VCC rise time
1
µs
tREC
E recovery time
40
200
ms
Symbol
Parameter(1)(2)
1.
All voltages referenced to VSS.
2.
Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
Min
Typ
Max
Unit
VPFD
Power-fail deselect voltage
M48T512Y
4.2
4.35
4.5
V
M48T512V
2.7
2.9
3.0
V
VSO
Battery backup switchover voltage
M48T512Y
3.0
V
M48T512V
VPFD –100mV
V
tDR
(3)
3.
At 25 °C, VCC = 0 V.
Expected data retention time
10
YEARS



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