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RG1C データシート(PDF) 1 Page - EIC discrete Semiconductors |
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RG1C データシート(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() RG01C ULTRA FAST RECOVERY RECTIFIER DIODE PRV : 1000 Volts Io : 0.7 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL VALUE UNIT Maximum Peak Reverse Voltage VRM 1000 V Maximum Peak Reverse Surge Voltage VRSM 1000 V Maximum Average Rectified Forward Current (Note1) IF(AV) 0.7 A Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sine wave, Single Shot ) IFSM 10 A Maximum Forward Voltage at IF = 0.7 A VF 3.3 V Maximum Forward Current IF 0.5 A Maximum Reverse Current at Reverse voltage IR 0.05 mA Maximum Reverse Current at Reverse voltage Ta = 100 °C IR(H) 0.5 mA Maximum Reverse Recovery Time ( Note 2 ) Trr 100 ns Junction Temperature Range TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Notes : (1) Lead Length 10 mm. (2) Reverse Recovery Test Conditions : IF = 100 mA, IRP = 100 mA. Page 1 of 2 Rev. 02 : March 25, 2005 RATING DO - 41 Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) * Pb / RoHS Free |
同様の部品番号 - RG1C |
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同様の説明 - RG1C |
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