MJD112_10 datasheet(1/10 Pages) STMICROELECTRONICS

部品番号	MJD112

部品情報	Complementary power Darlington transistors

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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1 / 10 page

January 2010

Doc ID 3540 Rev 3

1/10

10

MJD112

MJD117

Complementary power Darlington transistors

Features

■ Good hFE linearity

■ High fT frequency

■ Monolithic Darlington configuration with

integrated antiparallel collector-emitter diode

Application

■ Linear and switching industrial equipment

Description

The devices are manufactured in planar

technology with “base island” layout and

monolithic Darlington configuration.

.

Figure 1.

Internal schematic diagram

TO-252

1

3

TAB

(DPAK)

R1 typ. = 15 kΩ

R2 typ. = 100 Ω

Table 1.

Device summary

Order codes

Marking

Polarity

Package

Packaging

MJD112T4

MJD112

NPN

DPAK

Tape and reel

MJD117T4

MJD117

PNP

DPAK

Tape and reel

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