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FS6131 データシート(PDF) 21 Page - ON Semiconductor

部品番号 FS6131
部品情報  Programmable Line Lock Clock Generator IC
PDF  44 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FS6131 データシート(HTML) 21 Page - ON Semiconductor

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FS6131
Table 11: VCXO Coarse Running Capacitance
XCT[3]
XCT[2]
XCT[1]
XCT[0]
VCXO Tuning Capacitance (pf)
0
0
0
0
10.00
0
0
0
1
10.84
0
0
1
0
11.69
0
0
1
1
12.53
0
1
0
0
13.38
0
1
0
1
14.22
0
1
1
0
15.06
0
1
1
1
15.91
1
0
0
0
16.75
1
0
0
1
17.59
1
0
1
0
18.43
1
0
1
1
19.28
1
1
0
0
20.13
1
1
0
1
20.97
1
1
1
0
21.81
1
1
1
1
22.66
7.0 Electrical Specifications
Table 12: Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Units
Supply Voltage, dc (VSS = ground)
VDD
VSS-0.5
7
V
Input Voltage, dc
VI
VSS-0.5
VDD+0.5
V
Output Voltage, dc
VO
VSS-0.5
VDD+0.5
V
Input Clamp Current, dc (VI < 0 or VI > VDD)
IIK
-50
50
mA
Output Clamp Current, dc (VI < 0 or VI > VDD)
IOK
-50
50
mA
Storage Temperature Range (non-condensing)
TS
-65
150
°C
Ambient Temperature Range, Under Bias
TA
-55
125
°C
Junction Temperature
TJ
150
°C
Lead Temperature (soldering, 10s)
260
°C
Input Static Discharge Voltage Protection (MIL-STD 883E, Method 3015.7)
2
kV
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These conditions represent a stress rating only, and functional
operation of the device at these or any other conditions above the operational limits noted in this specification is not implied. Exposure to maximum rating conditions for
extended conditions may affect device performance, functionality, and reliability.
CAUTION: ELECTROSTATIC SENSITIVE DEVICE
Permanent damage resulting in a loss of functionality or performance may occur if this device is subjected to a high-energy
electrostatic discharge.
Rev. 4 | Page 21 of 44 | www.onsemi.com



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