SPD09P06PLG datasheet(1/9 Pages) INFINEON

部品番号	SPD09P06PLG

部品情報	SIPMOS Power-Transistor Feature N-Channel Enhancement mode

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メーカー	INFINEON [Infineon Technologies AG]

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1 / 9 page

200

8-07-29

Rev 2.5

Page 1

SPD09P06PL

G

SIPMOS



====Power-Transistor

Product Summary

VDS

-60

V

RDS(on)

0.25

ID

-9.7

A

Feature

P-Channel

Enhancement mode

Logic Level prueb

175°C operating temperature

Avalanche rated

dv/dt rated

P

G-TO252-3

Gate

pin1

Drain

pin 2

Source

pin 3

Type

Package

SPD09P06PL G

P

G-TO252-3

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

TC=25°C

TC=100°C

ID

-9.7

-6.8

A

Pulsed drain current

TC=25°C

ID puls

-38.8

Avalanche energy, single pulse

ID=-9.7 A , VDD=-25V, RGS=25

EAS

70

mJ

Avalanche energy, periodic limited by Tjmax

EAR

4.2

Reverse diode dv/dt

IS=-9.7A, VDS=-48, di/dt=200A/µs, Tjmax=175°C

dv/dt

6

kV/µs

Gate source voltage

VGS

±20

V

Power dissipation

TC=25°C

Ptot

42

W

Operating and storage temperature

Tj , Tstg

-55... +175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Lead free

Yes

• P-channel

• Enhancement mode

• Logic Level

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

• Pb-free lead plating; RoHS compliant

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