IPS616-25B datasheet(1/4 Pages) IPS

部品番号	IPS616-25B

部品情報	silicon controlled rectifiers

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メーカー	IPS [IP SEMICONDUCTOR CO., LTD.]

ホームページ	http://www.ipsemiconductor.com

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IPS616-xxB

IPS616 series of silicon controlled rectifiers are

specifically designed for medium power switching and

phase control applications.

High current density due to double mesa technology

SIPOS and Glass passivation technology used has

reliable operation up to 125℃ junction temperature.

Low Igt parts available.

IPS616 series are suitable for general purpose

applications, a high gate sensitivity is required.

Symbol

Value

Unit

IT(RMS)

16

A

IT(AV)

10

A

VDRM / VRRM

600

V

VTM

≤ 1.6

V

MAIN FEATURES

Parameter

Symbol

Value

Unit

RMS on

–state current (Tc = 105℃, 180º conduction half sine wave)

IT(RMS)

16

A

Average on

–state current

(Tc = 105℃, 180º conduction half sine wave)

IT(AV)

10

A

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

Tj

-40 to +150

-40 to +110

℃

Repetitive Peak Off-state Voltage

Tj = 25℃

Repetitive Peak Reverse Voltage

Tj = 25℃

VDRM

VRRM

600

V

Non Repetitive Peak Off-state Voltage

Tj = 25℃

Non Repetitive Peak Reverse Voltage

Tj = 25℃

VDSM

VRSM

700

V

One cycle Non Repetitive surge current ( Half Cycle, 50Hz)

ITSM

160

A

I²t Value for fusing

(tp = 10ms, Half Cycle)

I²t

128

A²s

Critical rate of rise of turned

– on current (IG = 2 X IGT, Tj = 125℃)

dI/dt

50

A/us

Peak gate current

tp = 20us, Tj = 125℃

IGM

4

A

Average gate power dissipation

Tj = 125℃

PG(AV)

1

W

ABSOLUTE MAXIMUM RATINGS

1

TO-220B

IP Semiconductor Co., Ltd.

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

同様の部品番号 - IPS616-25B

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