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EU2Z データシート(PDF) 1 Page - EIC discrete Semiconductors

部品番号 EU2Z
部品情報  FAST RECOVERY
PDF  2 Pages
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メーカー  EIC [EIC discrete Semiconductors]
ホームページ  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

EU2Z データシート(HTML) 1 Page - EIC discrete Semiconductors

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EU2 - EU2Z
FAST RECOVERY
RECTIFIER DIODES
PRV : 200 - 600 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
EU2Z
EU2
EU2A
UNIT
Maximum Peak Reverse Voltage
VRM
200
400
600
V
Maximum Peak Reverse Surge Voltage
VRSM
250
450
650
V
Maximum Average Forward Current
IF(AV)
1.0
A
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sine wave, Single Shot )
Maximum Forward Voltage at IF = 1.0 A
VF
1.4
V
Maximum Reverse Current at VR = VRM
Ta = 25
°C
IR
10
µA
Maximum Reverse Current at VR = VRM
Ta = 100
°C
IR(H)
300
µA
Maximum Reverse Recovery Time ( Note 1 )
Trr
0.4
µs
Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 10 mA, IRP = 10 mA.
Page 1 of 2
Rev. 01 : April 2, 2002
RATING
IFSM
15
A
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
* Pb / RoHS Free


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