2SA1744 datasheet(3/8 Pages) RENESAS

3 / 8 page

Document No. D13160EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SA1744

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

2002

The 2SA1744 is a power transistor developed for high-speed

switching and features a high hFE at Low VCE(sat). This transistor is

ideal for use as a driver in DC/DC converters and actuators.

In addition, a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting

cost.

FEATURES

• High hFE and low VCE(sat):

hFE

≥ 100 (VCE = −2 V, IC = −3 A)

VCE(sat)

≤ 0.3 V (IC = −8 A, IB = −0.4 A)

• Full-mold package that does not require an insulating board or

bushing

PACKAGE DRAWING (UNIT: mm)

Electrode Connection

1. Base

2. Collector

3. Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

−100

Collector to emitter voltage

VCEO

−60

Emitter to base voltage

VEBO

−7.0

Collector current (DC)

IC(DC)

−15

Collector current (pulse)

IC(pulse)*

−30

Base current (DC)

IB(DC)

−7.5

Total power dissipation

PT (Tc = 25

°C)

Total power dissipation

PT (Ta = 25

°C)

2.0

Junction temperature

150

°C

Storage temperature

Tstg

−55 to +150

°C

*PW

≤ 300

µs, duty cycle ≤ 10%

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