2SC1971 datasheet(1/1 Pages) ASI

部品番号	2SC1971

部品情報	NPN SILICON RF POWER TRANSISTOR

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メーカー	ASI [Advanced Semiconductor]

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25 °C

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 50 mA

17

V

BVCBO

IC = 10 mA

35

V

BVEBO

IE = 5.0 mA

4.0

V

ICBO

VCES = 25 V

500

µA

IEBO

VEB = 3.0 V

500

µA

hFE

VCE = 10 V

IC = 100 mA

10

50

180

---

COB

VCB = 30 V

f = 1.0 MHz

15

pF

GPE

η

POUT

VCC = 13.5 V

PIN = 0.6 W

f =175 MHz

10

60

6.0

70

7.0

dB

%

W

NPN SILICON RF POWER TRANSISTOR

2SC1971

DESCRIPTION:

The

ASI 2SC1971 is Designed for RF

power amplifiers on VHF band mobile

radio applications.

FEATURES INCLUDE:

• Replaces Original 2SC1971 in

Most Applications

• High Gain Reduces Drive

Requirements

• Economical TO-220CE Package

MAXIMUM RATINGS

IC

2.0 A

VCBO

35 V

PDISS

12.5 W @ TC = 25 °C

TSTG

-55 °C to +150 °C

θ

JC

10 °C/W

PACKAGE STYLE TO-220AB (COMMON EMITTER)

1 = BASE

2 = EMITTER

3 = COLLECTOR TAB = EMITTER

同様の部品番号 - 2SC1971

メーカー	部品番号	データシート	部品情報
Mitsubishi Electric Sem...	2SC1971	127Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
Inchange Semiconductor ...	2SC1971	219Kb / 2P	isc Silicon NPN Power Transistor
New Jersey Semi-Conduct...	2SC1971	153Kb / 1P	silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio
eleflow technologies co...	2SC1971	269Kb / 3P	4 to 5 watts output power amplifiers in VHF band applications.
Mitsubishi Electric Sem...	2SC1971-01	127Kb / 3P	NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)

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