BLV21 datasheet(1/1 Pages) ASI

部品番号	BLV21

部品情報	NPN SILICON RF POWER TRANSISTOR

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メーカー	ASI [Advanced Semiconductor]

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 25 mA

35

V

BVCES

IC = 5.0 mA

65

V

BVEBO

IE = 10 mA

4.0

V

ICBO

VCB = 30 V

1.0

mA

hFE

VCE = 5.0 V

IC = 200 mA

5.0

---

COB

VCB = 30 V

f = 1.0 MHz

50

pF

PG

ηηηη

C

VCC = 28 V

POUT = 15 W

f = 175 MHz

10

65

dB

%

NPN SILICON RF POWER TRANSISTOR

BLV21

DESCRIPTION:

The

ASI BLV21 is Designed for

Class C, 28 V High Band Applications

up to 175 MHz.

FEATURES:

• Common Emitter

• P

G = 10 dB at 15 W/175 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

1.75 A

VCEO

35 V

VCES

65 V

VEBO

4.0 V

PDISS

36 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +150 °C

θθθθ

JC

4.8 °C/W

PACKAGE STYLE .380 4L FLG

ORDER CODE: ASI10579

MINIMUM

inches / mm

.970 / 24.64

B

C

D

E

F

G

A

MAXIMUM

.385 / 9.78

.980 / 24.89

inches / mm

H

.160 / 4.06

.180 / 4.57

DIM

.220 / 5.59

.230 / 5.84

.105 / 2.67

.085 / 2.16

I

J

.240 / 6.10

.255 / 6.48

.785 / 19.94

F

B

G

.125

Ø.125 NOM.

FULL R

D

E

C

H

.112 x 45°

A

I

J

.004 / 0.10

.006 / 0.15

.280 / 7.11

.720 / 18.29

.730 / 18.54

C

B

E

同様の部品番号 - BLV21

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NXP Semiconductors	BLV21	80Kb / 11P	UHF power transistor August 1986
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