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STPS30L45CT データシート(PDF) 2 Page - STMicroelectronics

部品番号 STPS30L45CT
部品情報  Low drop power Schottky rectifier
PDF  12 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS30L45CT データシート(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS30L45C
2/12
Doc ID 8002 Rev 4
1
Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 2.
Absolute Ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward
current
TO-220FPAB
Tc =110 °C, δ = 0.5
Per diode
Per device
15
30
A
TO-220AB, TO-247,
I2PAK, D2PAK
Tc = 135 °C, δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
220
A
IRRM
Repetitive peak reverse current
tp = 2 µs square F = 1 kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
3
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
6000
W
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Maximum operating junction temperature (1)
150
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
1.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a
()
--------------------------
<
Table 3.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220FPAB
Per diode
Total
4
3.2
°C/W
TO-220AB, TO-247, I2PAK, D2PAK
Per diode
Total
1.60
0.85
Rth(c)
Coupling
TO-220FPAB
2.5
°C/W
TO-220AB, TO-247, I2PAK, D2PAK
0.10



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