STPS4045CT datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

Characteristics

STPS4045C

4/8

Doc ID 4605 Rev 5

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

IM(A)

100

120

140

160

180

200

220

1.E-03

1.E-02

1.E-01

1.E+00

C=25°C

C=75°C

C=125°C

δ =0.5

t(s)

TO-247

IM(A)

100

120

140

160

180

200

1.E-03

1.E-02

1.E-01

1.E+00

C=25°C

C=75°C

C=125°C

δ =0.5

t(s)

TO-220AB

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 8.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

IR(µA)

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

j=150°C

j=125°C

j=25°C

j=100°C

j=50°C

j=75°C

VR(V)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

Figure 10.

Forward voltage drop versus

forward current (per diode)

C(pF)

100

1000

10000

100

F=1MHz

OSC=30mVRMS

j=25°C

VR(V)

IFM(A)

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

VFM(V)

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