DMN3112SSS

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

A

0

0.4

0.8

1.2

1.6

2.0

2.4

I = 250µA

D

I = 1mA

D

0

2

4

6

8

10

Fig. 8 Diode Forward Voltage vs. Current

0

0.2

0.4

0.6

0.8

1

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

T = 25°C

A

Fig. 9 Typical Total Capacitance

10

100

1,000

0

5

10

15

20

25

30

V

, DRAIN-SOURCE VOLTAGE (V)

DS

C

iss

C

oss

C

rss

Fig. 10 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

T - T = P * R

(t)

Duty Cycle, D = t /t

JA

JA

12

θ

R

(t) = r(t) * R

R

= 168°C/W

θθ

θ

JA

JA

JA

P(pk)

t

1

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

DMN3112SSS

Document number: DS31582 Rev. 1 - 2

3 of 4

www.diodes.com

October 2008

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