DMN2040LTS

Document number: DS31941 Rev. 2 - 2

2 of 6

www.diodes.com

October 2009

© Diodes Incorporated

DMN2040LTS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1.0

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.5

-

1.2

V

Static Drain-Source On-Resistance

-

19

26

26

36

m

Ω

Forward Transfer Admittance

-

8

-

S

Diodes Forward Voltage

-

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

-

570

-

pF

f = 1.0MHz

Output Capacitance

-

85

-

pF

Reverse Transfer Capacitance

-

75

-

pF

Gate Resistance

-

1.23

-

Ω

SWITCHING CHARACTERISTICS (Note 6)

Total Gate Charge

-

5.2

-

nC

Gate-Source Charge

-

0.86

-

nC

Gate-Drain Charge

-

1.25

-

nC

Turn-On Delay Time

-

5.2

-

ns

Turn-On Rise Time

-

13.5

-

ns

Turn-Off Delay Time

-

19.8

-

ns

Turn-Off Fall Time

-

6.1

-

ns

Notes:

5. Short duration pulse test used to minimize self-heating effects.

6. Guaranteed by design. Not subject to production testing.

0

5

10

15

20

01

2

3

4

5

Fig. 1 Typical Output Characteristics

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 1.5V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 10.0V

GS

0

4

8

12

16

20

01

2

3

4

Fig. 2 Typical Transfer Characteristics

V

, GATE SOURCE VOLTAGE (V)

GS

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A