FMMTL619 datasheet(1/3 Pages) DIODES

部品番号	FMMTL619

部品情報	SOT23 NPN SILICON PLANAR HIGH GAIN

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メーカー	DIODES [Diodes Incorporated]

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SOT23 NPN SILICON PLANAR HIGH GAIN

MEDIUM POWER TRANSISTOR

ISSUE 2 – NOVEMBER 2005

FEATURES

Very low equivalent on-resistance; R

CE(sat)=160mΩ at 1.25A

COMPLEMENTARY TYPE –

FMMTL720

PARTMARKING DETAIL –

L69

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5V

Continuous Collector Current

IC

1.25

A

Peak Pulse Current

ICM

2A

Base Current

IB

200

mA

Power Dissipation at Tamb=25°C

Ptot

500

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

FMMTL619

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Zetex Semiconductors	FMMTL619	65Kb / 3P	NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
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同様の説明 - FMMTL619

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Zetex Semiconductors	BC849A	52Kb / 3P	SOT23 NPN SILICON PLANAR
Zetex Semiconductors	FMMTL619	77Kb / 3P	SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR
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Fairchild Semiconductor	FMMT5179TA	68Kb / 2P	SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR
Diodes Incorporated	FMMTL618	81Kb / 3P	SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR NOVEMBER 1997