ZXMN2AMC

Document number: DS35089 Rev. 1 - 2

4 of 8

www.diodes.com

December 2010

© Diodes Incorporated

ZXMN2AMC

A Product Line of

Diodes Incorporated

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

0.7

-

3.0

V

Static Drain-Source On-Resistance (Note 10)

-

0.085

0.120

Ω

0.140

0.300

Forward Transconductance (Note 10 & 11)

-

6.2

-

S

Diode Forward Voltage (Note 10)

-

0.9

0.95

V

Reverse Recover Time (Note 11)

-

23

-

ns

Reverse Recover Charge (Note 11)

-

5.7

-

nC

DYNAMIC CHARACTERISTICS (Note 11)

Input Capacitance

-

299

-

pF

f = 1.0MHz

Output Capacitance

-

60

-

pF

Reverse Transfer Capacitance

-

33

-

pF

Total Gate Charge (Note 12)

-

0.8

-

nC

Total Gate Charge (Note 12)

-

3.1

-

nC

Gate-Source Charge (Note 12)

-

0.7

-

nC

Gate-Drain Charge (Note 12)

-

1.0

-

nC

Turn-On Delay Time (Note 12)

-

2.3

-

ns

Turn-On Rise Time (Note 12)

-

2.6

-

ns

Turn-Off Delay Time (Note 12)

-

1.6

-

ns

Turn-Off Fall Time (Note 12)

-

1.3

-

ns

Notes:

10. Measured under pulsed conditions. Width

≤ 300µs. Duty cycle ≤ 2%.

11. For design aid only, not subject to production testing.

12. Switching characteristics are independent of operating junction temperature.