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CEM4953 データシート(PDF) 1 Page - Chino-Excel Technology |
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CEM4953 データシート(HTML) 1 Page - Chino-Excel Technology |
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1 / 4 page ![]() Dual P-Channel Enhancement Mode Field Effect Transistor CEM4953 FEATURES -30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -30 2.0 -30 -4.9 ±20 V W A A V 1 SO-8 1 D1 D1 D2 D2 S1 G1 S2 G2 8 7 6 5 1 2 3 4 Lead free product is acquired. 2010.Apr http://www.cetsemi.com Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W 62.5 RθJA |
同様の部品番号 - CEM4953_10 |
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同様の説明 - CEM4953_10 |
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