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ZXMS6002G データシート(PDF) 1 Page - Diodes Incorporated

部品番号 ZXMS6002G
部品情報  60V N-Channel self protected enhancement mode
PDF  10 Pages
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メーカー  DIODES [Diodes Incorporated]
ホームページ  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMS6002G データシート(HTML) 1 Page - Diodes Incorporated

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Issue 3 - June 2007
1
www.zetex.com
© Zetex Semiconductors plc 2007
ZXMS6002G
60V N-Channel self protected enhancement mode
IntelliFET™ MOSFET with status indication
Summary
Continuous drain source voltage
VDS = 60V
On-state resistance
500m
Nominal load current (VIN = 5V)
1.4A
Clamping energy
550mJ
Description
Ordering information
Self protected low side MOSFET. Monolithic
over temperature, over current, over voltage
(active clamp) and ESD protected logic level
functionality. Intended as a general purpose
switch, with status indication.
Features
•
Status pin (analog status indication)
•
Short circuit protection with auto restart
•
Over voltage protection (active clamp)
•
Thermal shutdown with auto restart
•
Over-current protection
•
Input protection (ESD)
•
Load dump protection (actively protects
load)
•
Logic level input
•
High continuous current rating
Note: The tab is connected to the drain pin and
must be electrically isolated from the source
pin. Connection of significant copper to the tab
is recommended for best thermal performance.
Device
Part mark
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMS6002GTA
ZXMS6002
7
12 embossed
1000
D
Top view
S
Status
IN


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