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2SC5232 データシート(PDF) 2 Page - Toshiba Semiconductor |
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2SC5232 データシート(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SC5232 2003-03-27 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 15 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA DC current gain hFE (Note) VCE = 2 V, IC = 10 mA 300 ¾ 1000 VCE (sat) (1) IC = 10 mA, IB = 0.5 mA ¾ 15 30 Collector-emitter saturation voltage VCE (sat) (2) IC = 200 mA, IB = 10 mA ¾ 110 250 mV Base-emitter saturation voltage VBE (sat) IC = 200 mA, IB = 10 mA ¾ 0.87 1.2 V Transition frequency fT VCE = 2 V, IC = 10 mA 80 130 ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 4.2 pF Collector-emitter on resistance Ron IB = 1 mA, Vin = 1 Vrms, f = 1 kHz ¾ 0.9 ¾ W Turn-on time ton ¾ 85 ¾ Storage time tstg ¾ 170 ¾ Switching time Fall time tf Duty cycle < = 2% IB1 = -IB2 = 5 mA ¾ 40 ¾ ns Note: hFE classification A: 300~600, B: 500~1000 |
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