APTM120DA30CT1G

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5 – 5

Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.2

0.4

0.6

0.8

1

1.2

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Forward Characteristics

0

10

20

30

40

0

0.5

11.5

22.5

33.5

Reverse Characteristics

0

50

100

150

200

400

600

800

1000 1200 1400 1600

Capacitance vs.Reverse Voltage

0

200

400

600

800

1000

1200

1400

1

10

100

1000

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

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