CMXT3904

SURFACE MOUNT

DUAL NPN

SILICON TRANSISTORS

ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

hre

VCE=10V, IC=1.0mA, f=1.0kHz

0.5

8.0

hfe

VCE=10V, IC=1.0mA, f=1.0kHz

100

400

hoe

VCE=10V, IC=1.0mA, f=1.0kHz

1.0

40

μS

NF

VCE=5.0V, IC=100μA, RS=1.0kΩ,

f=10Hz to 15.7kHz

5.0

dB

td

VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA

35

ns

tr

VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA

35

ns

ts

VCC=3.0V, IC=10mA, IB1=IB2=1.0mA

200

ns

tf

VCC=3.0V, IC=10mA, IB1=IB2=1.0mA

50

ns

LEAD CODE:

1) Emitter Q1

2) Base Q1

3) Collector Q2

4) Emitter Q2

5) Base Q2

6) Collector Q1

MARKING CODE: X1A

SOT-26 CASE - MECHANICAL OUTLINE

www.centr a lsemi.com

R3 (12-February 2010)