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CZT3090LE データシート(PDF) 1 Page - Central Semiconductor Corp |
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CZT3090LE データシート(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() CZT3090LE ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3090LE is an Enhanced Specification Low VCE(SAT) NPN Silicon Power Transistor packaged in an industry standard SOT-223 case. High Collector Current, coupled with a Low Saturation Voltage, make this an excellent choice for industrial and consumer applications where electrical and thermal operational efficiency are top priorities. MARKING: FULL PART NUMBER APPLICATIONS: • Power Management / DC-DC Converters • Portable and Battery Powered Products • LAN Equipment / Motor Controllers FEATURES: • Low VCE(SAT) NPN Transitor • High Current (IC=3.0A MAX) • VCE(SAT)=0.155V TYP @ IC=3.0A • SOT-223 Surface Mount Package • Complementary PNP device: CZT7090LE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 3.0 A Peak Collector Current ICM 5.0 A Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=50V 50 nA IEBO VEB=5.0V 50 nA BVCBO IC=100μA 60 V BVCEO IC=10mA 50 V BVEBO IE=10µA 6.0 V VCE(SAT) IC=100mA, IB=1.0mA 37 50 mV VCE(SAT) IC=1.0A, IB=20mA 66 100 mV VCE(SAT) IC=2.0A, IB=200mA 77 150 mV VCE(SAT) IC=3.0A, IB=60mA 155 250 mV hFE VCE=2.0V, IC=500mA 300 hFE VCE=2.0V, IC=1.0A 300 hFE VCE=2.0V, IC=3.0A 150 174 Cob VCB=10V, IE=0, f=1.0MHz 25 pF fT VCE=10V, IC=500mA 100 MHz ♦ ♦ Enhanced Specification ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ SOT-223 CASE SOT-223 CASE R1 (1-March 2010) www.centra lsemi.com |
同様の部品番号 - CZT3090LE |
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同様の説明 - CZT3090LE |
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