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MCP14E6 データシート(PDF) 5 Page - Microchip Technology |
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MCP14E6 データシート(HTML) 5 Page - Microchip Technology |
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5 / 30 page  © 2011 Microchip Technology Inc. DS25006A-page 5 MCP14E6/7/8 Enable Function (ENB_A, ENB_B) High-Level Input Voltage VEN_H 2.4 — — V VDD = 12V, Low-to-High Transition Low-Level Input Voltage VEN_L —— 0.8 V VDD = 12V, High-to-Low Transition Hysteresis VHYST —0.4 — V Enable Pull-up Impedance RENBL 0.7 1.6 3.0 M Ω VDD =14V, ENB_A = ENB_B = GND Propagation Delay Time tD3 —60 80 ns VDD =12V, Figure 4-3 Propagation Delay Time tD4 —70 85 ns VDD =12V, Figure 4-3 Power Supply Supply Voltage VDD 4.5 — 18.0 V Supply Current IDD — 1400 2200 µA VIN_A =3V, VIN_B =3V, ENB_A = ENB_B = High IDD —800 1100 µA VIN_A =0V, VIN_B =0V, ENB_A = ENB_B = High IDD — 1300 2000 µA VIN_A =3V, VIN_B =0V, ENB_A = ENB_B = High IDD — 1300 2000 µA VIN_A =0V, VIN_B =3V, ENB_A = ENB_B = High IDD — 800 1200 µA VIN_A =3V, VIN_B =3V, ENB_A = ENB_B = Low IDD — 500 600 µA VIN_A =0V, VIN_B =0V, ENB_A = ENB_B = Low IDD — 600 900 µA VIN_A =3V, VIN_B =0V, ENB_A = ENB_B = Low IDD — 600 900 µA VIN_A =0V, VIN_B =3V, ENB_A = ENB_B = Low TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range TA -40 — +125 °C Maximum Junction Temperature TJ —— +150 °C Storage Temperature Range TA -65 — +150 °C Package Thermal Resistances Thermal Resistance, 8L-6x5 DFN θJA — 35.7 — °C/W Typical four-layer board with vias to ground plane Thermal Resistance, 8L-PDIP θJA —89.3 — °C/W Thermal Resistance, 8L-SOIC θJA —149.5 — °C/W DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)(2) (CONTINUED) Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Note 1: Switching times are ensured by design. 2: Tested during characterization, not production tested. |
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