2SB1424

Preliminary

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R208-044,a

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-20

V

Collector-Emitter Voltage

-20

V

Emitter-Base Voltage

-6

V

DC

-3

Collector Current

Pulse(Note 2)

-5

A

Collector Dissipation

0.5

W

Junction Temperature

150

℃

Storage Temperature

-55 ~ +150

℃

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

-20

V

Collector-Emitter Breakdown Voltage

-20

V

Emitter-Base Breakdown Voltage

-6

V

Collector Cutoff Current

-0.1

μA

Emitter Cutoff Current

-0.1

μA

ON CHARACTERISTICS

DC Current Gain

120

390

Collector-Emitter Saturation Voltage

-0.5

V

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

240

MHz

Output Capacitance

35

pF

RANK

Q

R

RANGE

120-270

180-390

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.