2SC4027G-X-TN3-R datasheet(2/5 Pages) UTC

2 / 5 page

2SC4027

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R209-018.B

ABSOLUTE MAXIMUM RATING (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

180

Collector to Emitter Voltage

VCEO

160

Emitter to Base Voltage

VEBO

Collector Current

1.5

Collector Current (Pulse)

ICP

2.5

Ta=25°C

Collector Dissipation

TC=25°C

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=10A, IE=0

180

Collector-Emitter Breakdown Voltage

BVCEO

IC =1mA, RBE=∞

160

Emitter-Base Breakdown Voltage

BVEBO

IE=10μA, IC =0

Collector-Emitter Saturation Voltage

VCE(SAT) IC =500mA, IB=50mA

0.13 0.45

Base-Emitter Saturation Voltage

VBE(SAT)

IC =500mA, IB=50mA

0.85

1.2

Collector Cutoff Current

ICBO

VCB=120V, IE=0

1.0

μA

Emitter Cutoff Current

IEBO

VEB=4V, I IC =0

1.0

μA

hFE1

VCE=5V, IC =100mA

100

400

DC Current Gain

hFE2

VCE=5V, IC =10mA

Gain-Bandwidth Product

VCE=10V, IC =50mA

120

MHz

Output Capacitance

Cob

VCB=-10V, f=1MHz

Turn-On Time

TON

See specified Test Circuit

μs

Storage Time

TSTG

1.2

μs

Fall Time

μs

CLASSIFICATION OF hFE1

RANK

RANGE

100~200

140~280

200~400

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