3LN01MG-AL3-R datasheet(1/3 Pages) UTC

部品番号	3LN01MG-AL3-R

部品情報	N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS

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メーカー	UTC [Unisonic Technologies]

ホームページ	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

3LN01M

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-285.a

N CHANNEL SILICON

MOSFET GENERAL-PURPOSE

SWITCHING DEVICE

APPLICATIONS

DESCRIPTION

The 3LN01M uses UTC advanced technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device’s general purpose is for switching device

applications.

FEATURES

* RDS(ON) = 3.7Ω @VGS = 4 V

* Ultra low gate charge ( typical 1.58 nC )

* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Gate

1.Source

3.Drain

Lead-free:

3LN01ML

Halogen-free: 3LN01MG

ORDERING INFORMATION

Ordering Number

Pin Assignment

Normal

Lead Free

Halogen-Free

Package

1

2

3

Packing

3LN01M-AL3-R

3LN01ML-AL3-R

3LN01MG-AL3-R

SOT-323

S

G

D

Tape Reel

MARKING

同様の部品番号 - 3LN01MG-AL3-R

メーカー	部品番号	データシート	部品情報
Sanyo Semicon Device	3LN01M	41Kb / 4P	Ultrahigh-Speed Switching Applications
Sanyo Semicon Device	3LN01M	53Kb / 4P	General-Purpose Switching Device Applications
ON Semiconductor	3LN01M	301Kb / 5P	Small Signal MOSFET November 2014 - Rev. 1
VBsemi Electronics Co.,...	3LN01M	1,012Kb / 8P	N-Channel 60-V (D-S) MOSFET
ON Semiconductor	3LN01M-TL-E	301Kb / 5P	Small Signal MOSFET November 2014 - Rev. 1

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同様の説明 - 3LN01MG-AL3-R

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3LN01MG-AL3-R データシート(PDF) 1 Page - Unisonic Technologies

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