IXGP50N60C4 datasheet(1/6 Pages) IXYS

部品番号	IXGP50N60C4

部品情報	High-Gain IGBTs

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メーカー	IXYS [IXYS Corporation]

ホームページ	http://www.ixys.com

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IXGA50N60C4

IXGP50N60C4

IXGH50N60C4

V

CES

= 600V

I

C110

= 36A

V

CE(sat)

≤≤≤≤≤ 2.50V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25°C to 150°C

600

V

CGR

T

J

= 25°C to 150°C, R

GE = 1MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C

90

A

I

C110

T

C = 110°C

36

A

I

CM

T

C = 25°C, 1ms

220

A

SSOA

V

GE = 15V, TVJ = 125°C, RG = 10Ω

I

CM = 72

A

(RBSOA)

Clamped Inductive Load

V

CE ≤ VCES

P

C

T

C = 25°C

290

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb.

M

d

Mounting Torque (TO-220 & TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-247

6.0

g

DS100298B(04/11)

G = Gate

D

= Collector

S = Emitter

Tab = Collector

TO-247 (IXGH)

G

E

C

C (Tab)

TO-263 AA (IXGA)

G

E

C (Tab)

G

C E

TO-220AB (IXGP)

C (Tab)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified

Min.

Typ.

Max.

BV

CES

I

C

= 250

μA, V

GE = 0V

600

V

GE(th)

I

C

= 250

μA, V

CE = VGE

4.0

6.5

V

I

CES

V

CE = VCES, VGE = 0V

25

μA

T

J = 125°C

1 mA

I

GES

V

CE = 0V, VGE = ±20V

±100 nA

V

CE(sat)

I

C

= 36A, V

GE = 15V, Note 1

1.95

2.50

V

T

J = 125°C

1.65

V

High-Gain IGBTs

High-Speed PT Trench IGBT

Features

Optimized for Low Switching Losses

International Standard Packages

Square RBSOA

Advantages

Easy to Mount

Space Savings

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Lamp Ballasts

同様の部品番号 - IXGP50N60C4

メーカー	部品番号	データシート	部品情報
IXYS Corporation	IXGP50N60B4	227Kb / 6P	High-Gain IGBTs

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