SFT6678M datasheet(2/3 Pages) SSDI

2 / 3 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0019D

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SFT6678 SERIES

Electrical Characteristics

Symbol

Min

Max

Units

Collector Cutoff Current

VCE= 400V, VBE(off) =1.5V

VCE= 650V, VBE(off) =1.5V

TC = 25°C

TC = 125°C

ICEV

0.5

1.0

µA

Collector – Base Leakage Current

VCB = 650V

ICBO

Emitter Cutoff Current

(VEB = 8V, IC = 0)

IEBO

Collector-Emitter Sustaining Voltage

C = 200mA, IB = 0)

CEO(sus)

400

DC Current Gain*

VCE = 3V, 1C = 15A, TA = 25°C

VCE = 3V, 1C = 1A, TA = 25°C

VCE = 3V, 1C = 15A,TA = -55°C

FE1

FE2

FE3

Base-Emitter Saturation Voltage*

(IC = 15A, IB = 3A)

VBE (SAT)

1.5

Collector-Emitter Saturation Voltage*

(IC = 15A, IB = 3A)

(TC = 25°C)

(TC = 125°C)

CE (SAT)

1.0

2.0

Current Gain

C = 1A, VCE = 10V, f = 5MHz)

|hFE|

Output Capacitance

CB = 10V , f = 0.1MHz)

Cob

150

500

Delay Time

CC = 200V, IC = 15A, IB1 = IB2 = 3A, tP = 50 μsec, Duty

Cycle < 2%, V

B = 6V, RL = 13.5Ω)

t(on)

0.1

µsec

Rise Time

2.5

Storage Time

t(off)

0.6

Fall Time

0.5

Cross Over Time (IC = 15 A(pk), V

CLAMP = 450V, IB1 = 3 A, VBE(off) = 6V)

0.5

µsec

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