SPT5503 datasheet(2/3 Pages) SSDI

2 / 3 page

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: TR0026C

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SPT5502 and SPT5503

Electrical Characteristic

Symbol

Min

Max

Units

Collector – Emitter Breakdown Voltage

(IC = 200μA, IB = 0A, RBE = 1kΩ)

SPT5502

SPT5503

BVCER

700

800

––

VDC

Collector – Cutoff Current

(IB = 0ADC)

VCE = 300VDC

VCE = 400VDC

ICEO

––

µADC

Collector – Cutoff Current

(VCE = Rated VCE, VEB(off) = 1.5VDC)

TC = 25°C

TC = 100°C

ICEX

––

0.5

µADC

mADC

Collector – Cutoff Current

(VCB = Rated VCB, IE = 0ADC)

ICBO

––

µADC

Emitter – Cutoff Current

(VBE = 10 VDC, IC = 0ADC)

IEBO

––

µADC

DC Current Gain *

(VCE = 5VDC)

IC = 50mADC

IC = 0.5ADC

IC = 1ADC

hFE

––

Collector – Emitter Saturation Voltage *

IC = 0.5ADC, IB = 0.1ADC

IC = 1ADC, IB = 0.25ADC

VCE(Sat)

––

0.5

1.0

VDC

Base – Emitter Saturation Voltage *

IC = 0.5ADC, IB = 0.1ADC

IC = 1ADC, IB = 0.25ADC

VBE(Sat)

––

1.0

1.2

VDC

Current Gain Bandwidth Product

(VCE = 10VDC, IC = 100mADC, f = 1MHz)

––

MHz

Output Capacitance

(VCB = 20VDC, IE = 0, f = 1MHz)

Cob

––

Second Breakdown Collector Current

with Base Forward Biased

(VCE = 200VDC, t = 1 sec(Non-Repetitive))

IS/B

––

mADC

Delay Time

Rise Time

VCC = 125VDC, IC = 1ADC,

IB1 = 200mADC

––

100

300

nsec

Storage Time

Fall Time

VCC = 125VDC, IC = 1ADC,

IB1 = IB2 = 200mADC

––

500

µsec

nsec

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