SEMIX223GD12VC datasheet(2/5 Pages) SEMIKRON

2 / 5 page

SEMiX223GD12Vc

Rev. 2 – 16.02.2011

Characteristics

Symbol Conditions

min.

typ.

max.

Unit

Inverse diode

VF = VEC IF = 225 A

VGE =0 V

chip

Tj =25 °C

2.2

2.49

Tj =150 °C

2.1

2.4

VF0

Tj =25 °C

1.1

1.3

1.5

Tj =150 °C

0.7

0.9

1.1

Tj =25 °C

3.6

3.9

4.4

m

Tj =150 °C

4.7

5.4

5.9

m

IRRM

IF = 225 A

di/dtoff =3400 A/µs

VGE =-15 V

VCC = 600 V

Tj =150 °C

210

Qrr

Tj =150 °C

39.4

µC

Err

Tj =150 °C

16.4

Rth(j-c)

per diode

0.23

K/W

Module

LCE

RCC'+EE'

res., terminal-chip

TC =25°C

0.7

m

TC =125 °C

1m

Rth(c-s)

per module

0.014

K/W

to heat sink (M5)

to terminals (M6)

2.5

900

Temperatur Sensor

R100

Tc=100°C (R25=5 k)

493 ± 5%



B100/125

R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];

3550

±2%

SEMiX® 33c

SEMiX223GD12Vc

Features

• Homogeneous Si

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

Typical Applications*

•AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperature limited to TC=125°C

max.

• Product reliability results are valid for

Tj=150°C

• Dynamic values apply to the

following combination of resistors:

RGon,main = 2,9 

RGoff,main = 2,9 

RG,X = 2,2 

RE,X = 0,5 

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