2N5415CSM4 datasheet(2/2 Pages) SEME-LAB

部品番号	2N5415CSM4

部品情報	PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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メーカー	SEME-LAB [Seme LAB]

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Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCB = -175V

2N5415

VCB = -280V

2N5416

VCE = -150V

VEB = -4V

2N5415

VEB = -6V

2N5416

IC = -10mA

2N5415

IC = -10mA

2N5416

IC = -50mA RBE=50W 2N5416

IC = -50mA IB =-5mA

IC = -50mA VCE = -10V

IC = -50mA VCE =-10V 2N5415

IC = -50mA VCE =-10V 2N5416

IC = -5mA

VCE = -10V

f = 1KHz

IE = 0

VCB = -10V

f = 1MHz

IC = -10mA VCE = -10V

f = 5MHz

-50

-20

-200

-300

-350

-0.5

-1.5

150

120

ICBO

ICEO

IEBO

VCEO(sus)*

VCER(sus)*

VCE(sat)

VBE*

hFE*

hfe

Ccbo

—

MHz

2N5415CSM4

2N5416CSM4

Prelim. 02/00

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

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Collector Cut Off Current (VE =0)

Emitter Cut Off Current (IB =0)

Emitter Cut Off Current (IC =0)

Collector Emitter on Voltage(IB =0)

Collector Emitter Breakdown Voltage

Collector Base Breakdown Voltage

Base-Emitter Voltage

DC Current Gain

Small Signal Current Gain

Collector-Base Capacitance

Transition Frequency

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

*Pulsed: duration = 300

ms, duty cycle 1.5%

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