Website: http://www.semelab.co.uk

Prelim. 9/00

LAB

SEME

2N6849

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V

W

V

nA

mA

V

(S É )

pF

nC

ns

A

V

ns

mC

—

-100

0.30*

-2

-4

-100

100

-250

-1000

- 2.1

2.5

3.5

7.5

500

300

100

25

45

13

23

12

22

30

60

70

140

70

140

70

140

-6.5

-25

4

250

1.8

negligible

f = 1.0 MHz

Zo = 50

W

Modified MOSFETSymbol

showing the integralreverse

P-N Junction rectifier.

Drain – Source Breakdown Voltage*

Static Drain – Source On–State

Gate Threshold Voltage*

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Zero Gate Voltage Drain Current*

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continous Source Current*

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn–On Time

STATIC ELECTRICAL RATINGS

SOURCE – DRAIN DIODE CHARACTERISTICS

1 Pulse Test: Pulse Width

£ 300ms, duty cycle £ 2%

2 Repetitive Rating: Pulse width limited by max. junction temperature

D

G

S