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BDS18 データシート(PDF) 2 Page - Seme LAB

部品番号 BDS18
部品情報  SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
PDF  3 Pages
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メーカー  SEME-LAB [Seme LAB]
ホームページ  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BDS18 データシート(HTML) 2 Page - Seme LAB

  BDS18 Datasheet HTML 1Page - Seme LAB BDS18 Datasheet HTML 2Page - Seme LAB BDS18 Datasheet HTML 3Page - Seme LAB  
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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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BDS18 BDS18SMD
BDS19 BDS19SMD
Parameter
Test Conditions
Max.
Unit
RTHj-case
Thermal resistance junction - case
Max. 2.5°C/W
RTHj-a
Thermal resistance junction - ambient
Max. 62.5°C/W
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Collector cut-off current
(IE = 0)
Collector cut-off current
(IB = 0)
Emitter cut-off current
(IC = 0)
Collector - Emitter
sustaining voltage (IB = 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency
BDS18
VCB = –120V
BDS19
VCB = –150V
BDS18
VCE = –60V
BDS19
VCE = –75V
VEB = –5V
BDS18
BDS19
IC = –1A
IB = –0.1A
IC = –1A
VCE = –2V
IC = –0.5A VCE = –2V
IC = –4A
VCE = –2V
IC = –0.5A VCE = –10V
–20
–20
–0.1
–0.1
–10
–120
–150
–0.5
–1.0
40
250
15
150
30
mA
mA
mA
V
V
V
V
MHz
ICBO
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
VBE(on)*
hFE*
fT
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
THERMAL DATA
IC = –100mA
ton
ts
tf
On Time
(td + tr)
Storage Time
Fall Time
IC = 2A
VCC = –80V
IB1 = 0.2A
IC = 2A
VCC = –80V
IB1 = –IB2 = 0.2A
0.5
1.5
0.3
ms
ms
ms
SWITCHING CHARACTERISTICS
*Pulsed : Pulse duration = 300
ms , duty cycle = 1.5%



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