2N7002KW datasheet(1/4 Pages) SECOS

部品番号	2N7002KW

部品情報	N-Ch Small Signal MOSFET with ESD Protection

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メーカー	SECOS [SeCoS Halbleitertechnologie GmbH]

ホームページ	http://www.secosgmbh.com

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2N7002KW

115mA , 60V, RDS(ON) 4 

N-Ch Small Signal MOSFET with ESD Protection

Elektronische Bauelemente

31-Mar-2011 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

SOT-323

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



RDS(ON), VGS@10V, IDS@500mA=3



RDS(ON), VGS@4.5V, IDS@200mA=4



Advanced Trench Process Technology



High Density Cell Design For Ultra Low On-Resistance



Very Low Leakage Current In Off Condition



Specially Designed for Battery Operated Systems,

Solid-State Relays Drivers：Relays, Displays, Lamps,

Solenoids, Memories, etc.



ESD Protected 2KV HBM



In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA



Case: SOT-323 Package



Terminals: Solderable per MIL-STD-750,

Method 2026

MARKING

K72

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SOT-323

3K

7’ inch

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

115

mA

Pulsed Drain Current

1

IDM

800

mA

Maximum Power Dissipation

TA=25°C

PD

200

mW

TA=75°C

120

Thermal Resistance Junction-Ambient (PCB mounted)

2

RJA

625

°C / W

Operating Junction and Storage Temperature

TJ, TSTG

-55~150

°C

Notes:

1. Maximum DC current limited by the package.

2. Surface mounted on FR4 board, t < 5sec.



Gate



Source

Drain



REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

1.80

2.20

G

0.100 REF.

B

1.80

2.45

H

0.525 REF.

C

1.15

1.35

J

0.08

0.25

D

0.80

1.10

K

-

E

1.20

1.40

L

0.650 TYP.

F

0.20

0.40

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