2SC3052 datasheet(1/3 Pages) SECOS

部品番号	2SC3052

部品情報	NPN Plastic-Encapsulate Transistor

PDF	3 Pages

Scroll/Zoom	100%

メーカー	SECOS [SeCoS Halbleitertechnologie GmbH]

ホームページ	http://www.secosgmbh.com

Logo

1 / 3 page

Elektronische Bauelemente

2SC3052

0.2A , 50V

NPN Plastic-Encapsulate Transistor

18-Feb-2011 Rev. B

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

1

Base

2

Emitter

Collector

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE

Excellent linearity of DC forward current gain.

Low collector to emitter saturation voltage

VCE(sat)=0.3V max. (@IC=100mA, IB=10mA)

CLASSIFICATION OF hFE

Product-Rank

2SC3052-E

2SC3052-F

2SC3052-G

Range

150~300

250~500

400~800

Marking

LE

LF

LG

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SOT-23

3K

7’ inch

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

50

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

6

V

Collector Current - Continuous

IC

200

mA

Collector Power Dissipation

PC

150

mW

Junction, Storage Temperature

TJ, TSTG

125, -55~125

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

V(BR)CBO

50

-

V

IC=100µA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

50

-

V

IC=100µA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

6

-

V

IE=100µA, IC=0

Collector Cut-Off Current

ICBO

-

0.1

µA

VCB=50V, IE=0

Emitter Cut-Off Current

IEBO

-

0.1

µA

VEB=6V, IC=0

hFE (1)

150

-

800

VCE=6V, IC=1mA

DC Current Gain

hFE (2)

50

-

VCE=6V, IC=0.1mA

Collector to Emitter Saturation Voltage

VCE(sat)

-

0.3

V

IC=100mA, IB=10mA

Base to Emitter Saturation Voltage

VBE(sat)

-

1

V

IC=100mA, IB=10mA

Transition Frequency

fT

180

-

MHz

VCE=6V, IC=10mA

Collector Output Capacitance

Cob

-

4

pF

VCE=6V, IE=0, f=1MHz

Noise Figure

NF

-

15

dB

VCE=6V, IE= -0.1mA, f=1KHz,

RG=2K

SOT-23

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.80

3.04

G

0.09

0.18

B

2.10

2.55

H

0.45

0.60

C

1.20

1.40

J

0.08

0.177

D

0.89

1.15

K

0.6 REF.

E

1.78

2.04

L

0.89

1.02

F

0.30

0.50

同様の部品番号 - 2SC3052

メーカー	部品番号	データシート	部品情報
Isahaya Electronics Cor...	2SC3052	220Kb / 5P	LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Jiangsu Changjiang Elec...	2SC3052	80Kb / 1P	TRANSISTOR (NPN)
Jiangsu Changjiang Elec...	2SC3052	36Kb / 1P	TRANSISTOR (NPN)
Guangdong Kexin Industr...	2SC3052	41Kb / 1P	NPN Transistor
SeCoS Halbleitertechnol...	2SC3052	352Kb / 3P	NPN Silicon Plastic-Encapsulate Transistor

More results

同様の説明 - 2SC3052

メーカー	部品番号	データシート	部品情報
Weitron Technology	2SD2098	111Kb / 5P	NPN Plastic-Encapsulate Transistor
SeCoS Halbleitertechnol...	2SD2142	218Kb / 2P	NPN Plastic Plastic-Encapsulate Transistor
	2SC2883	370Kb / 3P	NPN Plastic-Encapsulate Transistor
	2SC4098	83Kb / 1P	NPN Plastic-Encapsulate Transistor
	2SC4116	172Kb / 3P	NPN Plastic-Encapsulate Transistor
	2SC4215	195Kb / 3P	NPN Plastic-Encapsulate Transistor
	2SC4373	77Kb / 1P	NPN Plastic-Encapsulate Transistor
	2SD602	1Mb / 3P	NPN Plastic-Encapsulate Transistor
	2SD602	1Mb / 3P	NPN Plastic-Encapsulate Transistor
	BC846W	909Kb / 4P	NPN Plastic Encapsulate Transistor