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APT31M100B2 データシート(PDF) 4 Page - Microsemi Corporation

部品番号 APT31M100B2
部品情報  N-Channel MOSFET
PDF  4 Pages
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メーカー  MICROSEMI [Microsemi Corporation]
ホームページ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT31M100B2 データシート(HTML) 4 Page - Microsemi Corporation

  APT31M100B2 Datasheet HTML 1Page - Microsemi Corporation APT31M100B2 Datasheet HTML 2Page - Microsemi Corporation APT31M100B2 Datasheet HTML 3Page - Microsemi Corporation APT31M100B2 Datasheet HTML 4Page - Microsemi Corporation  
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Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-264 (L) Package Outline
T-MAX™ (B2) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
e3 100% Sn Plated
1ms
100ms
Rds(on)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Scaling for Different Case & Junction
Temperatures:
I
D
= I
D(T
C
= 25
°C)*(TJ - TC)/125
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
Note:
t1 = Pulse Duration
DC line
100µs
I
DM
10ms
13µs
100µs
I
DM
100ms
10ms
13µs
Rds(on)
DC line
T
J
= 150°C
T
C
= 25°C
1ms
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1
10
100
1200
1
10
100
1200
200
100
10
1
0.1
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
200
100
10
1
0.1
APT31M100B2_L
T
J
= 125°C
T
C
= 75°C



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