SML100T21 datasheet(1/2 Pages) SEME-LAB

部品番号	SML100T21

部品情報	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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メーカー	SEME-LAB [Seme LAB]

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SML100T21

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E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

VDSS

ID

IDM

VGS

VGSM

PD

TJ , TSTG

TL

IAR

EAR

EAS

1

2

3

2

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

2.21 (0.087)

2.59 (0.102)

0.40 (0.016)

0.79 (0.031)

15.49 (0.610)

16.26 (0.640)

5.38 (0.212)

6.20 (0.244)

2.87 (0.113)

3.12 (0.123)

1.65 (0.065)

2.13 (0.084)

5.45 (0.215)

BSC

2plcs

1.01 (0.040)

1.40 (0.055)

T247clip Package Outline.

Dimensions in mm (inches)

Drain – Source Voltage

Continuous Drain Current

Pulsed Drain Current 1

Gate – Source Voltage

Gate – Source Voltage Transient

Total Power Dissipation @ Tcase = 25°C

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

Avalanche Current1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 2

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

1000

21

84

±30

±40

520

4.16

–55 to 150

300

21

50

2500

V

A

V

W

W/°C

°C

A

mJ

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting TJ = 25°C, L = 11.34mH, RG = 25W, Peak IL = 21A

VDSS

1000V

ID(cont)

21A

RDS(on) 0.500W

W

Pin 1 – Gate

Pin 2 – Drain

Pin 3 – Source

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• New T247clip Package

(Clip–mounted TO–247 Package)

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

D

S

G

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