SSG4502C datasheet(1/6 Pages) SECOS

部品番号	SSG4502C

部品情報	N & P-Ch Enhancement Mode Power MOSFET

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メーカー	SECOS [SeCoS Halbleitertechnologie GmbH]

ホームページ	http://www.secosgmbh.com

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Elektronische Bauelemente

SSG4502C

N-Ch: 10 A, 30 V, RDS(ON) 16 m

P-Ch: -8.5 A, -30 V, RDS(ON) 23 m

N & P-Ch Enhancement Mode Power MOSFET

27-Dec-2010 Rev. B

Page 1 of 6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs

utilize a high cell density trench process to provide low

RDS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,.

printers, PCMCIA cards, cellular and cordless

telephones

FEATURES



Low RDS(on) provides higher efficiency and extends battery life.



Low thermal impedance copper leadframe SOP-8 saves board space



Fast switching speed



High performance trench technology

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SOP-8

2.5K

13’ inch

MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

N- Ch

P- Ch

Unit

Drain-Source Voltage

VDS

30

-30

V

Gate-Source Voltage

VGS

20

-20

V

ID @ TA = 25°C

10

-8.5

A

Continuous Drain Current

1

ID @ TA = 70°C

8.1

-6.8

A

Pulsed Drain Current

2

IDM

±50

A

Continuous Source Current (Diode Conduction)

1

IS

2.3

-2.1

A

PD @ TA = 25°C

2.1

W

Total Power Dissipation

1

PD @ TA = 70°C

1.3

W

Operating Junction & Storage Temperature Range

TJ, TSTG

-55 ~ 150

°C

Thermal Resistance Ratings

t≦ 10 sec

62.5

°C / W

Maximum Junction-to-Ambient 1

Steady State

RθJA

110

°C / W

Notes:

1.

Surface Mounted on 1” x 1” FR4 Board.

2.

Pulse width limited by maximum junction temperature.

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.8

6.20

H

0.35

0.51

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D0°

8°

L

1.35

1.75

E

0.50

0.93

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

SOP-8

G

S

D

同様の部品番号 - SSG4502C

メーカー	部品番号	データシート	部品情報
SeCoS Halbleitertechnol...	SSG4502CE	3Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
	SSG4502CE	3Mb / 7P	N & P-Ch Enhancement Mode Power MOSFET
	SSG4502C	1Mb / 6P	N & P-Ch Enhancement Mode Power MOSFET

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